Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers

ABSTRACT

The present invention generally provides improved adhesion and oxidation resistance of carbon-containing layers without the need for an additional deposited layer. In one aspect, the invention treats an exposed surface of carbon-containing material, such as silicon carbide, with an inert gas plasma, such as a helium (He),. argon (Ar), or other inert gas plasma, or an oxygen-containing plasma such as a nitrous oxide (N 2 O) plasma. Other carbon-containing materials can include organic polymeric materials, amorphous carbon, amorphous fluorocarbon, carbon containing oxides, and other carbon-containing materials. The plasma treatment is preferably performed in situ following the deposition of the layer to be treated. Preferably, the processing chamber in which in situ deposition and plasma treatment occurs is configured to deliver the same or similar precursors for the carbon-containing layer(s). However, the layer(s) can be deposited with different precursors. The invention also provides processing regimes that generate the treatment plasma and systems which use the treatment plasma. The carbon-containing material can be used in a variety of layers, such as barrier layers, etch stops, ARCs, passivation layers, and dielectric layers.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 09/336,525, filed Jun. 18, 1999, which patent application isherein incorporated by reference.

BACKGROUND OF THE INVENTION FIELD OF THE INVENTION

The present invention relates generally to the fabrication of integratedcircuits on substrates. More particularly, the invention relates to aplasma treatment of carbon-containing layers, such as silicon carbide,to enhance adhesion to an adjacent layer and to minimize oxidation ofthe carbon-containing layer.

Sub-quarter micron multi-level metallization is one of the keytechnologies for the next generation of ultra large scale integration(ULSI). Reliable formation of multilevel interconnect features is veryimportant to the success of ULSI and to the continued effort to increasecircuit density and quality on individual substrates and die. As circuitdensity has increased, materials and structural changes have occurred inthe substrate stack. Some of the fundamental properties such as layeradhesion and oxidation resistance are needing revisiting as a result.

As layers are deposited in sequence, adhesion between layers becomesimportant to maintain structural integrity and to meet the performancedemands of the devices being formed. The use of new low k materials,useful as barrier layers, etch stops, anti-reflective coatings (ARCs),passivation layers, and other layers must provide good adhesion to beintegrated into the fabrication sequence. As an example, some of the newmaterials for ULSI use halogen doping, such as fluorine, to lower the kvalue of the layers, while maintaining desirable physical properties,such as strength. However, some of the doped material may outgas inprocessing. Thus, when adjacent layers are deposited and ultimatelyannealed, the layers may not properly adhere to each other, resulting indelamination of the layers.

Additionally, the new materials need to have improved oxidationresistance, particularly for layers exposed to an oxidizing plasma. Asone example, layers require patterned etching and hence undergo aphotolithography process in which a layer of photoresist material(typically organic polymers) is deposited on the layer to define theetch pattern. After etching, the photoresist layer is removed byexposing the photoresist layer to an active oxygen plasma, a processtypically referred to as “ashing”. During the rigorous plasma-enhancedoxidation of the ashing process, the charged particles of the plasmacollide with the substrate which can cause film loss and/or distort thecrystal lattice of the substrate, thereby comprising the integrity ofthe devices formed on the substrate. Erosion or film loss can lead toshort circuiting between the reduced dimension features such ascontacts, vias, lines, and trenches. The oxidation from ashing appearsto especially affect carbon-containing materials, such as SiC, and,thus, such materials in general could also benefit from improvedadhesion and increased oxidation resistance. Thus, an improved oxidationresistance and film loss resistance to such rigorous environments isneeded to maintain circuit integrity of the reduced dimension features.

Therefore, there is a need for improved processing that increases theresistance to oxidation and adhesion of carbon-containing materials.

SUMMARY OF THE INVENTION

The present invention generally provides improved adhesion and oxidationresistance of carbon-containing layers without the need for anadditional deposited layer. In one aspect, the invention treats anexposed surface of carbon-containing material, such as SiC, with aninert gas plasma, such as a helium (He), argon (Ar), or other inert gasplasma, or an oxygen-containing plasma such as a nitrous oxide (N₂O)plasma. Other carbon-containing materials can include organic polymericmaterials, aC, aFC, SiCO:H, and other carbon-containing materials. Theplasma treatment is preferably performed in situ following thedeposition of the layer to be treated. Preferably, the processingchamber in which in situ deposition and plasma treatment occurs isconfigured to deliver the same or similar precursors for thecarbon-containing layer(s). However, the layer(s) can be deposited withdifferent precursors. The invention also provides processing regimesthat generate the treatment plasma and systems which use the treatmentplasma. The carbon-containing material can be used in a variety oflayers, such as barrier layers, etch stops, ARCs, passivation layers,and dielectric layers.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features, advantages andobjects of the present invention are attained and can be understood indetail, a more particular description of the invention, brieflysummarized above, may be had by reference to the embodiments thereofwhich are illustrated in the appended drawings.

It is to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a cross-sectional schematic of one commercially available CVDplasma process chamber in which the plasma process of the presentinvention may be performed.

FIG. 2 is a Fourier Transform Infrared (FTIR) chart of the SiC of thepresent invention, indicating a particular bonding structure.

FIG. 3 shows a preferred embodiment of a dual damascene structure,utilizing the present invention.

DETAILED DESCRIPTION

The present invention provides improved adhesion and oxidationresistance of a carbon-containing layer by exposing the layer to aninert gas plasma or an oxygen-containing plasma without the need for anadditional deposited layer.

FIG. 1 is a cross-sectional schematic of a chemical vapor deposition(CVD) chamber, such as a CENTURA® DxZ™ CVD chamber available fromApplied Materials, Inc. of Santa Clara, Calif., in which a plasmatreatment process of the invention can be performed. The invention canbe carried out in other process chambers, including a lamp heatedprocess chamber. Process chamber 10 contains a gas distribution manifold11, typically referred to as a “showerhead”, for dispersing processgases through perforated holes (not shown) in the manifold to asubstrate 16 that rests on a substrate support 12. Substrate support 12is resistivily heated and is mounted on a support stem 13, so thatsubstrate support and the substrate supported on the upper surface ofsubstrate support can be controllably moved by a lift motor 14 between alower loading/off-loading position and an upper processing positionadjacent to the manifold 11. When substrate support 12 and the substrate16 are in the processing position, they are surrounded by an insulatorring 17. During processing, gases inlet to manifold 11 are uniformlydistributed radially across the substrate surface. The gases areexhausted through a port 24 by a vacuum pump system 32. A controlledplasma is formed adjacent to the substrate by application of RF energyto distribution manifold 11 from RF power supply 25. The substratesupport 12 and chamber walls are typically grounded. The RF power supply25 can supply either single or mixed-frequency RF power to manifold 11to enhance the decomposition of any gases introduced into the chamber10. A controller 34 controls the functions of the power supplies, liftmotors, mass controllers for gas injection, vacuum pump, and otherassociated chamber and/or processing functions. The controller executessystem control software stored in a memory 38, which in the preferredembodiment is a hard disk drive, and can include analog and digitalinput/output boards, interface boards, and stepper motor controllerboards. Optical and/or magnetic sensors are generally used to move anddetermine the position of movable mechanical assemblies. An example ofsuch a CVD process chamber is described in U.S. Pat. No. 5,000,113,which is incorporated herein by reference and entitled “ThermalCVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition ofSilicon Dioxide and In-situ Multi-step Planarized Process,” issued toWang et al. and assigned to Applied Materials, Inc., the assignee of thepresent invention.

The above CVD system description is mainly for illustrative purposes,and other plasma equipment, such as electrode cyclotron resonance (ECR)plasma CVD devices, induction-coupled RF high density plasma CVDdevices, or the like may be employed. Additionally, variations of theabove described system are possible, such as variations in substratesupport design, heater design, location of RF power connections,electrode configurations, and other aspects. For example, the substratecould be supported and heated by a resistively heated substrate support.

A process regime using a He plasma is provided in Table 1 and a processregime using N₂O is provided in Table 2. The gases are representativeand other gases such as other inert gases or other oxygen-containinggases may be used. TABLE 1 FOR He PLASMA Parameter Range Preferred MorePreferred He (sccm)  100-4000  500-2500  750-2000 Press. (Torr)   1-12  2-10   4-9 RF Power (W)   50-800  100-500  100-400 RF Power  0.7-11 1.4-7.2  1.4-5.7 density (W/in²) Temp. (° C.)   0-500   50-450  100-400Spacing (Mills)  200-700  300-600  300-500

TABLE 2 FOR N₂O PLASMA Parameter Range Preferred More Preferred N₂O(sccm)  100-4000  500-2500  750-2000 Press. (Torr)   1-12   2-10   4-9RF Power (W)   50-800  100-500  100-400 RF Power  0.7-11  1.4-7.2 1.4-5.7 density (W/in²) Temp. (° C.)   0-500   50-450  100-400 Spacing(Mills)  200-700  300-600  300-500

The above process regimes can be used to treat the exposed surface of acarbon-containing layer, such as SiC, with a He or N₂O plasma or otherinert or oxidizing gases, according to the invention, in a CENTURA® DxZ™CVD chamber, described above. Using the parameters of Table 1 or 2, a Heor N₂O gas, respectively, is flown into the chamber at a rate of about100 to about 4000 standard cubic centimeters (sccm), more preferablyabout 750 to about 2000 sccm. The chamber pressure is maintained atabout 1 to about 12 Torr, more preferably about 4 to about 9 Torr. Asingle 13.56 MHz RF power source delivers about 50 to about 800 watts(W), more preferably about 100 to about 400 W, to the chamber. A powerdensity of about 0.7 to about 11 W/in², more preferably about 1.4 toabout 5.7 W/in², is used. The RF power source may be a mixed-frequencyRF power supply. The substrate surface temperature is maintained atabout 0° to about 500° C., more preferably about 100° to about 400° C.The substrate is disposed about 200 to about 700 mils, more preferablyabout 300 to about 500 mils, from the gas plate.

The substrate is preferably exposed to the plasma for about 10 to about40 seconds. In most instances, one treatment cycle lasting 20 secondseffectively treats the layer to increase the adhesion and/or reduce thesusceptibility to oxidation. The parameters could be adjusted for otherchambers, substrate layers, and other gases which assist in improvingadhesion, particularly for those processes which improve adhesionwithout requiring additional deposition of layers.

The present invention is useful for treating a variety of materials. Forinstance, the materials could include primarily carbon-containinglayers, such as organic polymeric materials, aC, aFC, SiCO:H, and othercarbon-containing materials.

One material that has been used to advantage for multiple uses is a lowk SiC disclosed in copending applications, U.S. Ser. No. 09/165,248,entitled “A Silicon Carbide Deposition For Use As A Barrier Layer And AnEtch Stop”, filed Oct. 1, 1998, and a continuation-in-part of U.S. Ser.No. 09/219,945, entitled “A Silicon Carbide Deposition For Use as a LowDielectric Constant Anti-Reflective Coating”, filed Dec. 23, 1998, bothassigned to the assignee of the present invention, Applied Materials,Inc. and both incorporated by reference herein. This particular SiCoffers the advantage of being able to function as barrier layer, etchstop, ARC, and/or passivation layer as well as have a low k value andcould benefit from improved adhesion and increased oxidation resistance.

The process regimes yield a SiC material having a dielectric constant ofless than 7, preferably about 5 or less, and most preferably about 4.2or less. To deposit such a SiC layer on a 200 mm wafer, a reactive gassource such as trimethylsilane is flown into a reaction chamber, such asa CENTURA® DxZ™ chamber, without a substantial source of oxygenintroduced into the reaction zone, the trimethylsilane flowing at apreferable rate of about 50 to about 200 sccm./Preferably, a noble gas,such as helium or argon, is also flown into the chamber at a rate ofabout 200 to about 1000 sccm. The chamber pressure is maintainedpreferably at about 6 to about 10 Torr. A single 13.56 MHz RF powersource preferably delivers about 400 to about 600 W to the chamber,preferably about 5.7 to about 8.6 W/in². The substrate surfacetemperature is preferably maintained at about 300° to about 400° C.during the deposition of the SiC and the substrate is preferably locatedabout 300 to about 500 mils from a gas showerhead.

FIG. 2 is a Fourier Transform Infrared (FTIR) analysis of samples of SiCtreated with a He and N₂O plasma according to the present invention,showing the bonding structure of each treated SiC layer. The upper lineA shows the bonding structure of a SiC layer as deposited. The portionsof the analysis corresponding to different bonding structures applicableto the present invention have been identified, including the Si(CH₃)_(n)and SiC bonds. Overlaid on the line A is the bonding structure of thespecimen after the He plasma treatment. As can be seen, the He plasmaexposure has minimal to no effect on the composition and detectedbonding structure of the specimen. Also, overlaid on the line A is thebonding structure of the specimen after an O₂ plasma exposure. Byconditioning the substrate with the He plasma before subjecting thesubstrate to the O₂ plasma for about 10 to about 30 minutes, thesubstrate showed no appreciable effect from the O₂ plasma exposure.

The lower line B shows the bonding structure of a SiC specimen after N₂Oplasma treatment. The N₂O plasma treatment alters the bonding structurefrom the untreated specimen shown in the upper line A. The changeappears largely in the Si—O bonding structure of the N₂O plasma treatedspecimen. Overlaid on the lower line B is the bonding structure of thespecimen that has been treated by the N₂O plasma and then subjected toan O₂ plasma exposure, such as ashing, for about 10 to about 30 minutes.There appears to be no substantial difference in the bonding structureof the specimen after plasma treatment with N₂O and the specimen after asubsequent O₂ plasma exposure.

The results confirm that the He plasma does not significantly affect thecomposition of the SiC layer as detected by ESCA/XPS and FTIR analyses.The He treatment produces less change to the chemical composition thanthe N₂O plasma treatment. It is believed that the change is primarily aphysical change in the surface layer bonding structure, primarily to theSi dangling bonds as a result of the He plasma exposure. The surfacechange due to the He plasma treatment could be less than about 5 Å toabout 10 Å deep. For the N₂O plasma treatment of SiC, it is believedthat the oxygen from the N₂O gas reacts to form a Si—O bond and/or C—Obond at the SiC surface, which reduces Si dangling bonds and improvesthe adhesion and oxidation resistance.

EXAMPLE 1

Tables 3 and 4 show data of an Electron Spectroscopy for ChemicalAnalysis/X-Ray Photoelectron Spectroscan (ESCA/XPS) analysis report forthe chemical composition changes and bonding structural changes of a SiClayer deposited on a dielectric layer and exposed to a treating plasma,such as a He or N₂O plasma.

A series of SiC layers was exposed to the plasma treatment according toprocess regimes set forth in Tables 1 and 2. A He or N₂O gas was flowninto a chamber at a rate of about 1500 sccm, the chamber pressure wasmaintained at about 8.5 Torr, and a single 13.56 MHz RF power sourcedelivered about 250 W to the chamber for a 200 mm wafer. The substratesurface temperature was maintained at about 250° C. to about 400° C. andthe substrate was disposed about 400 mils from the gas plate. Thesubstrate was exposed to the plasma for about 20 seconds. TABLE 3 SampleC O Si N F Cl Base- 56 8 36 — — 0.5 untreated He Plasma 56 8 34 1 0.5 —N₂O 5 67 28 — — — Plasma Surface N₂O 35 24 36 4 — — Plasma Bulk

An untreated SiC sample contained about 56% C, 8% O, 36% Si, andnegligible amounts of N, F, and Cl. The SiC layer treated by the Heplasma contained a similar composition. The He plasma was used withoutthe substantial presence of other gases including oxygen, hydrogen,and/or nitrogen. To the extent that any oxygen, hydrogen, and/ornitrogen was present in the He gas plasma, the presence of such gaseswas negligible.

The N₂O treated sample, measured at or near the surface, changed thecomposition of the SiC layer to about 5% C, 67% O, and 28% Si,reflecting the additional oxidation of the surface of the SiC layer.Because of the surface compositional changes due to the N₂O plasmaexposure, the SiC layer was also analyzed throughout the bulk of thelayer cross-section having a thickness of about 3000 Å. The analysisshowed a change in composition to about 35% C, 24% O, 36% Si, and 3% N.

Table 4 shows data of an ESCA/XPS analysis report, detailing the carboncontent and the chemical bonding structure associated with the carbon ofthe samples of Table 3. TABLE 4 Sample Si—C C—C, C—H C—O O═C—O Base 6930 1 — He Plasma 68 29 3 — N₂O — 78 20 2 Plasma Surface N₂O 84 16 — —Plasma Bulk

The results show that the bonding structure remains relatively constantwith the He plasma treatment. The SiC surface composition is modifiedwith the N₂O plasma treatment to include more C—C and C—H bonds, and isbelieved to form Si—O and/or C—O bonds and otherwise to passivate the Sidangling bonds or other dangling bonds. The bonding changes at thesurface increase the adhesion to subsequent layers. Additionally, theN₂O oxidizes a thin portion of the layer by the controlled N₂O exposure,creating a surface that is resistant to further and deeper oxidationcompared to an untreated layer.

EXAMPLE 2

Table 5 shows the results of the plasma treatment of SiC in an ashingcompatibility study. A series of specimens with SiC was treated with Heor N₂O plasma according to the present invention, using the preferredprocess parameters described in Tables 1 and 2 above. A specimen of SiClayer was left untreated as a comparison specimen and another specimendeposited an undoped silicon oxide layer (USG) on the SiC layer asanother comparison specimen.

For this example, a He or N₂O gas was flown into a chamber at a rate ofabout 1500 sccm, the chamber pressure was maintained at about 8.5 Torr,and a single 13.56 MHz RF power source delivered about 250 W to thechamber for a 200 mm wafer. The substrate surface temperature wasmaintained at about 350° C. to about 450° C. and the substrate wasdisposed about 400 mils from the gas plate. The substrate was exposed tothe plasma for about 20 seconds. Thickness measurements were takenbefore and after an ashing process which used an oxygen plasma to removea photoresist layer. As can be seen, the results show that the He andN₂O plasma treatments reduce or prevent further oxidation in air orother oxidizing environments such as ashing. TABLE 5 Thickness BeforeThickness After Ashing in Å Ashing in Å Sample Oxide SiC Oxide SiC SiCLayer Layer Total Layer Layer Total Base untreated 40 2895 2935 191 28743065 layer He Plasma 0 3108 3108 60 3008 3068 N₂O Plasma 210 2821 3031255 2673 2928 Base with USG 242 2978 3220 256 3064 3320 layer depositedthereon

The distinctions between the untreated SiC and the plasma treated SiCcan be seen by comparing the differences in approximate oxide layerthicknesses shown in Table 5. A large increase in the layer thicknessfrom oxidation can affect the characteristics of the overall layer, byincreasing the dielectric constant or decreasing the ability of abarrier layer to resist metal diffusion. Thus, it is desirable tominimize any increase in the oxidized layer thickness. The oxide layerthickness of the untreated SiC layer was about 40 Å before ashing andabout 191 Å after ashing, an increase of about 150 Å. In contrast, theoxide layer thickness of the SiC layer treated with He plasma was about0 Å before ashing and about 60 Å after ashing, an increase of only about60 Å. The SiC treated with the N₂O plasma has an initial oxide layerthickness of about 210 Å and a resulting oxide layer thickness of about255 Å after the ashing process, an increase of only about 45 Å. As acomparison to the plasma treated SiC layers, about 240 Å of USG wasdeposited over a SiC layer and then exposed to an ashing process. Thethickness before ashing was about 242 Å and after ashing was 256 Å, anincrease of about 14 Å.

The test results show that the treated SiC layers resist oxidation fromashing about 300% more than the untreated SiC layer. The results alsoshow that the treated SiC layers result in an oxidation that is onlyabout 30 Å to about 45 Å more than an underlying SiC layer with a USGlayer deposited thereon.

EXAMPLE 3

A series of SiC layers was exposed to the N₂O plasma treatment accordingto process regimes set forth in Table 2. Specifically, for this example,about 1500 sccm of N₂O gas was flown into the chamber, the chamberpressure was maintained at about 8.5 Torr, a RF power of about 250 W wasdelivered to the chamber with a substrate temperature of about 350° C.to about 400° C. and a substrate to gas plate spacing of about 400 mils.In this test, the substrate layers included a 5000-20000 Å thick layerof USG, a 200-1000 Å thick layer of SiC, followed by another USG oxidelayer deposited thereon, and then capped with a 500 Å layer of nitridematerial. The SiC layer was treated with the plasma of the presentinvention prior to deposition of the USG layer. In one set of tests,specimens having a SiC layer were treated with an N₂O plasma for about20 seconds. On one set of specimens, a 7000 Å layer of USG material wasdeposited thereon and on another set, a 10000 Å layer of USG materialwas deposited thereon, each thickness representing typical depositedthicknesses in commercial embodiments. Similar specimens were preparedwith similar USG thicknesses deposited thereon with the SiC layer beingtreated for about 30 seconds instead of 20 seconds. Each set wasexamined for delamination under an optical microscope after about 1hour, 2 hours, 3 hours, and 4 hours of annealing. Even with an annealingtemperature of 450° C., the specimens showed no delamination.

A similar series of tests were conducted on similar SiC layers with USGlayers deposited thereon for similar time periods of treatment, butusing a He plasma treatment process according to the parameters ofTable 1. Specifically, for this example, about 1500 sccm of He gas wasflown into the chamber, the chamber pressure was maintained at about 8.5Torr, a RF power of about 250 W was delivered to the chamber with asubstrate temperature of about 350° C. to about 400° C. and a substrateto gas plate spacing of about 400 mils. The He plasma treatment yieldedsimilar results as the N₂O plasma treatment.

EXAMPLE 4

A series of SiC layers were exposed to the plasma treatment of thepresent invention and the layer adhesion characteristics tested. Thetreatment parameters used were within the preferred range of Table 2.Specifically, for this example about 1500 sccm of N₂O gas was flown intothe chamber, the chamber pressure was maintained at about 8.5 Torr, a RFpower of about 250 W was delivered to the chamber with a substratetemperature of about 350° C. to about 400° C. and a substrate to gasplate spacing of about 400 mils. The substrate layers included about5000 Å of USG, a 500 Å thick layer of SiC, where the SiC layer wastreated by the plasma treatment for about 20 seconds. Another USG oxidelayer of about 10000 Å was deposited thereon, and then capped with a 500Å thick layer of nitride material. Each substrate stack was annealed atabout 450° C. for four to eight cycles of about 30 minutes each for atotal of about two to about four hours to promote diffusion of hydrogenand other gases that would cause delamination.

The layer adhesion of the stack was then tested by a “stud pull test”wherein a stud is affixed typically by an epoxy adhesive to the stackand then pulled in a tensile direction and the tensile force measureduntil either the stud or the epoxy adhesive detaches from the substrateor the layers separate from the remaining substrate layers. Even with anannealing temperature of 450° C. for several cycles, the specimens didnot delaminate prior to the stud separating from the substrate. The N₂Oplasma treatment of the SiC for 20 seconds required greater than about11000 pounds per square inch (psi) to lift or separate the subsequentlayer from the SiC, where the stud pulled loose from the epoxy at about11000 psi without any delamination of the layers.

A similar set of tests was conducted on SiC specimens using the Heplasma treatment parameters of Table 1. Specifically, for this exampleabout 1500 sccm of He gas was flown into the chamber, the chamberpressure was maintained at about 8.5 Torr, a RF power of about 250 W wasdelivered to the chamber with a substrate temperature of about 350° C.to about 400° C. and a substrate to gas plate spacing of about 400 mils.Similar thicknesses of the layers and a similar exposure time as the N₂Oplasma treatment described above were used for the He plasma treatment.

The He plasma treatment required greater than about 7900 psi to lift thesubsequent layer from the SiC, where the stud pulled loose from theepoxy at about 7900 psi. Commercially, a value of about 4000 psi isacceptable. By comparison, similar stacks will typically fail a studpull test generally at less than about 1000 psi and delaminate withoutthe treatment of the present invention. The He plasma is preferred andis sufficient for most commercial processing of substrates, particularlybecause of the similarity in chemistry between the SiC deposition andthe He plasma treatment.

The present invention can be used on a variety of structures, includingdamascene structures and can be used on a variety of layers within thestructure. FIG. 3 shows a schematic of one exemplary damascenestructure, which in a preferred embodiment includes several layers ofSiC as a barrier layer, etch stop, ARC, and/or other layers where eachlayer may be exposed to the plasma treatment of the present invention.Furthermore, the structure preferably includes an in situ deposition oftwo or more of the various layers in the stack. The dielectric layerscan be deposited with the same or similar precursors as the SiC materialor can be deposited with different precursors. For the metallic layers,such as copper deposited in features, the embodiment also preferablyutilizes a plasma containing a reducing agent, such as ammonia, toreduce any oxides that may occur on the metallic surfaces.

At least two schemes can be used to develop a dual damascene structure,where lines/trenches are filled concurrently with vias/contacts. In a“counterbore” scheme, the integrated circuits are typically formed bydepositing a barrier layer, first dielectric layer, etch stop, seconddielectric layer, ARC, and photoresist where the substrate is thenetched. In FIG. 3, the integrated circuit 10 includes an underlyingsubstrate 60, which may include a series of layers deposited thereon andin which a feature 62 has been formed. If a conductor is deposited overthe feature 62, such as copper, the conductor may oxidize. In situ withthe deposition of the various layers, the oxide on the conductor can beexposed to a plasma containing a reducing agent of nitrogen andhydrogen, such as ammonia, to reduce the oxide. One embodiment isdescribed in co-pending U.S. Ser. No. 09/193,920, incorporated herein byreference, which describes plasma process parameters using an ammoniaflow rate of about 100 to about 1000 sccm with a chamber pressure rangeof about 1 to about 9 Torr, an RF power of about 100 to about 1000 wattsfor a 200 mm wafer, and a substrate to gas plate spacing of about 200 toabout 600 mils.

The SiC can be deposited in situ as a barrier layer, an etch stop, anARC, and/or passivation layer with the dielectric layers. For each SiClayer, the plasma treatment of the present invention may be utilized.For instance, a SiC barrier layer 64, preferably about 500 Å thick, isdeposited over the substrate and feature. Without the necessity ofremoving the substrate, a dielectric layer 66 may be in situ depositedover the barrier layer 64, preferably about 5000 Å thick. Preferably,the dielectric layer is an oxide based dielectric material having low kcharacteristics. The dielectric layer may be un-doped silicon dioxidealso known as un-doped silicon glass (USG), fluorine-doped silicon glass(FSG), or other silicon-carbon-oxygen based materials, some of which canbe low k materials. A low k etch stop 68, also of SiC material accordingto the present invention, is then in situ deposited on the dielectriclayer 66 to a thickness of about 200 Å to about 1000 Å, preferably about500 Å. The etch stop material is typically a material that has a sloweretching rate compared to the dielectric layer that is etched and allowssome flexibility in the etching process to ensure that a predetermineddepth is reached. In some well characterized etching processes, the etchstop may be unnecessary. Another dielectric layer 70 is deposited overetch stop 68, having a thickness from about 5,000 Å to about 10,000 Å,preferably about 7000 Å. Dielectric layer 70 can be the same material asdielectric layer 66. Likewise, the dielectric layer 70 can be depositedin situ with the barrier layer 64, dielectric layer 66, and etch stop68. An ARC 72, also of SiC material and preferably about 600 Å thick, isdeposited on the dielectric layer 70, using the same or similarchemistry as the underlying etch stop and barrier layer. After the ARCdeposition, a photoresist layer (not shown) is deposited on the ARC 72.Depositing and exposing of the photoresist and etching would normally beaccomplished in other chambers. The photoresist layer is exposed to forma pattern for the via/contact 20 a, using conventional photolithography.The layers are then etched using conventional etch processes, typicallyusing fluorine, carbon, and oxygen ions to form the via/contact 20 a.The photoresist layer is subsequently removed. Another photoresist layeris deposited and exposed to pattern the features, such a line/trench 20b and the layer(s) are etched to form the line/trench 20 b. Thephotoresist layer is subsequently removed. A liner 22 may be needed overthe features or on the fields between the features, which typically isTa, TaN, Ti, TiN, and other materials. A conductive material 20, such ascopper or aluminum, is then deposited simultaneously in both thevia/contact 20 a and the line/trench 20 b. Once the conductive material20 is deposited over the feature(s), it too may be exposed to a plasmacontaining a reducing agent, such as ammonia, to reduce any oxides.Another SiC barrier layer 75 may be deposited over the conductivematerial 20 to help prevent diffusion of the conductor throughsubsequent layers.

Another scheme for creating a dual damascene structure is known as a“self-aligning contact” (SAC) scheme. The SAC scheme is similar to thecounterbore scheme, except that a photoresist layer is deposited overthe etch stop, the etch stop is etched and the photoresist is removed.Then the subsequent layers, such as another dielectric layer, aredeposited over the patterned etch stop, an ARC deposited over thedielectric layer, and a second photoresist layer deposited over the ARC,where the stack is again etched. In the embodiment of FIG. 3, forinstance, a photoresist layer (not shown) is deposited over the etchstop 68, in typically a separate chamber from the etch stop deposition.The etch stop 68 is etched to form a pattern for a via/contact 20 a. Thephotoresist layer is removed. The dielectric layer 70 and ARC 72 canthen be in situ deposited in the same chamber as the etch stop wasdeposited. Another photoresist layer is deposited on the ARC 72. Thephotoresist is then exposed to form the pattern for the line/trench 20b. The line/trench 20 b and the via/contact 20 a are then etchedsimultaneously. The photoresist layer is subsequently removed.Conductive material 20, and if desired, another barrier layer 75, aredeposited over the substrate.

The in situ processing is enhanced because of the reduced number ofdifferent materials and regimes and, in particular, because the SiC canbe used as the barrier layer, etch stop, ARC layer, and even as apassivation layer and moisture barrier. The in situ processing isfurther enhanced in the preferred embodiment by using the same orsimilar precursors to deposit the dielectric layers. Reducing oreliminating the need to remove the substrate from the processing chamberbetween depositing the layers for chamber cleanings and the likeimproves throughput, reduces downtime, and reduces the risk ofcontamination.

In some instances, the etching may be performed in the same chamber byadjusting the process conditions. However, in many instances, thesubstrate may be moved to an etching chamber. In such instances, theprocessing may be performed within a cluster tool having both adeposition chamber and an etch chamber, such as the cluster tool shownin U.S. Pat. No. 4,951,601, assigned to the current assignee of theinvention, and incorporated herein by reference. The sealable clustertool enables processing within the cluster tool to occur withoutunnecessary exposure to the ambient conditions. However, where possiblea preferred arrangement enables processing within same chamber to reducethe transfer time between chambers for greater throughput.

Furthermore, in situ processing provides accurate control over the rateof transition between the deposited layer and the preceding layer. Thetransition between the two layers is controlled by the transitionbetween the chemistries and the related process parameters used todeposit the layers. The method of the present invention enables accuratecontrol over the transition via control over the plasma, process gasflow rates, and other processing parameters. The transition may beabrupt and can be achieved, for example, by extinguishing the plasmafollowed by the deposition of the dielectric layers and the various SiClayers while the substrate remains in the chamber. Gradual transitionscan also be achieved, for example, by altering the flow rates of theprocess gases. In a process which deposits a FSG dielectric layer, theflow rate of silicon tetrafluoride, commonly used for a FSG deposition,may be reduced while increasing the helium or argon flow to create asmooth transition from the dielectric layer to the SiC layer. Theflexibility in the transition is made possible by the ability to depositmultiple layers in situ. The above discussion refers to an exemplarysequence and is not to be construed as limited to such sequence, as suchin situ processing could be applied to a variety of sequences. Also,these structures are exemplary for a dual damascene structure and arenot intended to be limiting of the possible embodiments.

The embodiments shown and described are not intended to limit theinvention except as provided by the appended claims. Furthermore, in theembodiments, the order of the layers may be modified and thus, the term“deposited on” and the like in the description and the claims includes alayer deposited above the prior layer but not necessarily immediatelyadjacent the prior layer and can be higher in the stack. For instance,without limitation, various liner layers could be deposited adjacentdielectric layers, barrier layers, etch stops, metal layers, and otherlayers.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A method of processing a semiconductor substrate, comprising:depositing a layer comprising silicon-carbon-oxygen based material onthe surface of the semiconductor substrate; depositing a silicon carbidelayer on the silicon-carbon-oxygen based material; and treating thesilicon carbide layer with a plasma consisting essentially of an inertgas.
 2. The method of claim 1, further comprising depositing aphotoresist layer on the silicon carbide layer.
 3. The method of claim1, wherein the treatment plasma comprises a helium (He) plasma.
 4. Themethod of claim 1, wherein the silicon carbide layer is deposited bytrimethylsilane.
 5. The method of claim 1, wherein the silicon carbidelayer and the silicon-carbon-oxygen based material is deposited with thesame precursor.
 6. The method of claim 1, wherein treating the siliconcarbide layer occurs in situ with a deposition of the silicon carbidelayer.
 7. The method of claim 1, the treatment the silicon carbide layerwith a plasma comprises flowing the inert gas into a processing chamberat a rate of about 100 to about 4000 sccm, maintaining a temperaturebetween about 0° C. to about 500° C., establishing a chamber pressurebetween about 1 to about 12 Torr, applying RF power to the chamberhaving a power density of about 0.7 Watts/in² to about 11 Watts/in². 8.The method of claim 7, wherein applying RF power comprises applyingbetween about 50 watts and about 800 watts.
 9. The method of claim 1,the treatment the silicon carbide layer with a plasma comprises flowingthe inert gas into a processing chamber at a rate of about 500 to about2500 sccm, maintaining a temperature between about 50° C. to about 450°C., establishing a chamber pressure between about 2 to about 10 Torr,applying RF power to the chamber having a power density of about 1.4Watts/in² to about 7.2 Watts/in².
 10. The method of claim 9, whereinapplying RF power comprises applying between about 100 watts and about500 watts.
 11. The method of claim 1, the treatment the silicon carbidelayer with a plasma comprises flowing the inert gas into a processingchamber at a rate of about 750 to about 2000 sccm, maintaining atemperature between about 100° C. to about 400° C., establishing achamber pressure between about 4 to about 9 Torr, applying RF power tothe chamber having a power density of about 1.4 to about 5.7 W/in². 12.The method of claim 11, wherein applying RF power comprises applyingbetween about 100 watts and about 400 watts.
 13. A method of processinga semiconductor substrate, comprising: depositing a first siliconcarbide layer on the substrate surface; depositing a layer comprisingsilicon-carbon-oxygen based material on the first silicon carbide layer;depositing a second silicon carbide layer on the silicon-carbon-oxygenbased material; and treating the second silicon carbide layer with aplasma consisting essentially of an inert gas.
 14. The method of claim13, further comprising depositing a photoresist layer on the secondsilicon carbide layer.
 15. The method of claim 14, further comprisingpatterning the first silicon carbide layer prior to depositing thesilicon-carbon-oxygen based material.
 16. The method of claim 13,further comprising treating the first silicon carbide layer with aplasma consisting essentially of an inert gas
 17. The method of claim13, wherein treating the second silicon carbide layer to the treatmentplasma occurs in situ with a deposition of the second silicon carbidelayer.
 18. The method of claim 17, the treatment the second siliconcarbide layer with a plasma comprises flowing the inert gas into aprocessing chamber at a rate of about 100 to about 4000 sccm,maintaining a temperature between about 0° C. to about 500° C.,establishing a chamber pressure between about 1 to about 12 Torr,applying RF power to the chamber having a power density of about 0.7Watts/in² to about 11 Watts/in².
 19. The method of claim 16, whereintreating the second silicon carbide layer to the treatment plasma occursin situ with a deposition of the second silicon carbide layer.
 20. Themethod of claim 19, the treatment the second silicon carbide layer witha plasma comprises flowing the inert gas into a processing chamber at arate of about 100 to about 4000 sccm, maintaining a temperature betweenabout 0° C. to about 500° C., establishing a chamber pressure betweenabout 1 to about 12 Torr, applying RF power to the chamber having apower density of about 0.7 Watts/in² to about 11 Watts/in².